1/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a 4v drive nch+pch mosfet SH8M70 ? structure ? dimensions (unit : mm) silicon n-channel / p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application power switching, dc / dc converter. ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) SH8M70 tb 2500 type ? absolute maximum ratings (ta=25 ? c) parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg n-ch p-ch limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed 2.0(total) 1.4(element) 150 ? 55 to + 150 ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. ? 1 ? 1 ? 2 250 30 ? 250 ? 20 2.5 10 ? 1.0 ? 10 3.0 12 1.0 12 each lead has same dimensions sop8 ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain (1) (2) (3) (4) (8) (7) (6) (5) ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) ? 1 esd protection diode ? 2 body diode
2/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M70 n-ch ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 25v, v ds = 0v 250 ?? vi d = 1ma, v gs = 0v ?? 25 av ds = 250v, v gs = 0v 2.0 ? 4.0 v v ds = 10v, i d = 1ma ? ?? s ?? pf v ds = 25v ?? pf v gs = 0v ?? pf f = 1mhz v gs = 10v r g = 10 ?? ns ?? ns ?? ns ?? ns ? nc ?? nc ?? nc 1.25 1.63 i d = 1.5a, v gs = 10v 0.75 i d = 1.5a, v ds = 10v 180 70 20 10 r l = 83 20 20 25 5.2 2.1 ? 1.2 i d = 1.5a, v dd 125v v dd 125v v gs = 10v i d = 3a r l = 42 r g = 10 ? body diode characteristics (source-drain) (ta=25 ? c) v sd ?? 1.5 v i s = 3a, v gs = 0v parameter symbol min. typ. max. unit conditions ? forward voltage ? pulsed
3/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M70 p-ch ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 a ? 250 ?? v ??? 25 a ? 2.0 ?? 4.0 v ? 2.2 2.8 1.0 ?? s ? 250 ? pf ? 40 10 ? pf ? 9 ? pf ? 15 ? ns ? 30 ? ns ? 20 ? ns ? 8 ? ns ? 2.5 ? nc ? 2.8 ? nc ?? nc v gs = 15v, v ds = 0v i d = ? 1ma, v gs = 0v v ds = ? 250v, v gs = 0v v ds = ? 10v, i d = ? 1ma i d = ? 1.25a, v gs = ? 10v i d = ? 1.25a, v ds = ? 10v v ds = ? 25v v gs = 0v f = 1mhz v gs = ? 10v r l = 100 r g = 10 i d = ? 1.25a, v dd ? 125v v dd ? 125v, i d = ? 2.5a r l = 50 , r g = 10 v gs = ? 10v ? body diode characteristics (source-drain) (ta=25 ? c) v sd ??? 1.5 v i s =? 2.5a, v gs = 0v parameter symbol min. typ. max. unit conditions forward voltage ? ? pulsed
4/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M70 n-ch ? electrical characteristic curves 1 10 100 1000 0.01 0.1 1 10 100 100 0 drain-source voltage : v ds (v) typical capacitance : c (pf) ciss coss crss f=1mhz v gs =0v ta=25 c pulsed fig.1 typical capacitance vs. drain-source voltage 1 10 100 1000 10000 0.01 0.1 1 1 0 drain current : i d (a) switching time : t(ns) td(off) tf tr td(on) ta=25 c v dd =125v v gs =10v r g =10 pulsed fig.2 switching characteristics 1 10 100 1000 0.1 1 1 0 reverse drain current : i dr (a) reverse recovery time : trr fig.3 reverse recovery time v s. reverse drain current (ns) ta=25 c di/dt=100a/ s v gs =0v pulsed 0 5 10 15 01234567 total gate charge : qg(nc) gate source voltage : v gs (v) ta=25 c v dd =125v i d =3a pulsed fig.4 dynamic input characteristics 0.01 0.1 1 10 024 8 6 drain current : i d (a) gate-source voltage : vgs (v) ta=-25 c 25 c 75 c 125 c v ds =10v pulsed fig.5 typical transfer characteristics 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 static drain-source on-state resistanc e gate-source voltage : v gs (v) i d =3a 1.5a ta=25 c pulsed f ig.6 static drain-source on-state resistance vs.gate-source voltage 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1 .2 source-drain voltage : v sd (v) source current : i s (a) ta=-25 c 25 c 75 c 125 c v gs =0v pulsed fig.7 source current vs. source-drain voltage 0.1 1 10 0.1 1 1 0 drain current : i d (a) static drain-source on-state resistance : ta=125 c 75 c 25 c -25 c v gs =10v pulsed fig.8 static drain-source on-state resistance vs. drain current 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 15 0 75 100 125 temperature : tch ( c ) static drain-source on-state resistance v gs =10v pulsed i d =3.0a 1.5a fig.9 static drain-source on-state resistance vs. channel temperatur e
5/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M70 0.01 0.1 1 10 0.01 0.1 1 1 0 forward transfer admittance : |yfs| (s) drain current : i d (a) v ds =10v pulsed ta=-25 c 25 c 75 c 75 c fig.10 forward transfer admittanc e vs. drain current 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 15 0 channel temperature : tch ( c ) v ds =10v i d =1ma gate threshold voltage : v gs (th)(v) fig.11 gate threshold voltage vs. channel temperatu re 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 024681 0 5v 4v 3v 6v drain-sourse voltage : v ds (v) drain current : i d (a) fig.12 typical output characteristic s v gs =10v 9v 8v 7v p-ch ? electrical characteristic curves 1 10 100 1000 0.01 0.1 1 10 100 100 0 drain-source voltage : -v ds (v) typical capacitance : c (pf) ciss coss crss f=1mhz v gs =0v ta=25 c pulsed fig.1 typical capacitance vs. drain-source voltage 1 10 100 1000 10000 0.01 0.1 1 1 0 drain current : -i d (a) switching time : t(ns) td(off) tf tr td(on) fig.2 switching characteristics ta=25 c v dd = ? 125v v gs = ? 10v r g =10 pulsed 0 5 10 15 01234567891 0 total gate charge : qg(nc) gate source voltage : ? v gs (v) ta=25 c v dd = ? 125v i d = ? 2.5a pulsed fig.3 dynamic input characteristic s 0.01 02 46 8 0.1 1 10 drain current : -i d (a) gate-source voltage : ? v gs (v) ta=-25 c 25 c 75 c 125 c v ds =-10v pulsed fig.4 typical transfer characteristics 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 2 0 static drain - source on - state resistance gate-source voltage : -v gs (v) i d =-2.5a -1.25a ta=25 c pulsed fig.5 static drain-source on-state resistance vs. gate-source voltage 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1 .2 source-drain voltage : -v sd (v) source current : -i s (a) ta=-25 c 25 c 75 c 125 c v gs =0v pulsed fig.6 source current vs. source-drain voltage
6/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M70 0.1 1 10 0.1 1 1 0 drain current : -i d (a) static drain-source on-state resistance : ta=125 c 75 c 25 c -25 c v gs =10v pulsed fig.7 static drain-source on-stat e resistance vs. drain current 0.01 0.1 1 10 0.01 0.1 1 1 0 forward transfer admittance : |yfs| (s) drain current : -i d (a) v ds =10v pulsed ta=-25 c 25 c 75 c 125 c fig.8 forward transfer admittanc e vs. drain current 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 15 0 channel temperature : tch: ( c ) v ds =10v i d =1ma gate threshold voltage : -v gs(th) (v) fig.9 gate threshold voltage vs. channel temperature 1 10 100 1000 0.1 1 1 0 reverse drain current : -i dr (a) reverse recovery time : trr (ns) fig.10 reverse recovery time vs . reverse drain current 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 15 0 temperature : tch ( c ) v gs =10v pulsed i d =2.5a 1.25a fig.11 static drain-source on-state resistance vs.channel temperature static drain-source on-state resistance : r ds(on) ( ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 02 6 481 0 -5v (x-1) -4v -6v drain-sourse voltage : -v ds (v) (x-1) drain current : -i d (a) t c =25 c single pulsed fig.12 typical output characteristics v gs =-10v -9v -8v -7v
7/7 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M70 n-ch ? measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.13 switching time measurement circu it 90% 50% 50% 10% 10 % 90% 90 % 10% v gs v ds t on t off t r t d(on) t r t d(off) pulse width fig.14 switching waveforms v gs i g (const.) r g v ds d.u.t. i d r l v dd fig.15 gate charge measurement circu it v g v gs charge q g q gs q gd fig.16 gate charge waveform p-ch ? measurement circuit f ig.17 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.18 switching waveforms 90% 90% 90% 10% 10 % 10% 50% 50% v gs v ds t on t off t r t d(on) pulse width t r t d(off) fig.19 gate charge measurement circuit v gs i g (const.) r g v d s d.u.t. i d r l v dd fig.20 gate charge waveform v g v gs charge q g q gs q gd
r0039 a www.rohm.com ? 2009 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redundancy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
|
